molecular beam epitaxy
英
美
网络 分子束外延; 分子磊晶成长; 分子束磊晶; 分子束磊晶法; 生长
双语例句
- I will discuss how Molecular Beam Epitaxy ( MBE) was invented, its current status, and future developments.
我将介绍分子束磊晶技术（MBE）的发明经过、现况、和将来的发展。 - Magnetic and electrical properties of Fe_3O_4 thin films on MgO ( 100) substrates by laser molecular beam epitaxy
Fe3O4/MgO（100）薄膜的激光分子束外延与磁电学性能 - Mid-infrared photoluminescence of PbSe/ PbSrSe multiple quantum wells grown by molecular beam epitaxy
MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究 - Study of Structure and Optical Characteristics of GaAs/ GaN Grown by Molecular Beam Epitaxy
MBE生长GaAs/GaN薄膜结构与光学特性研究 - Molecular Beam Epitaxy System and the Growth of GaAs Single Crystal Films
分子束外延设备和砷化镓单晶的生长 - Al/ GaAs ( 100) schottky barrier contact has been grown by molecular beam epitaxy ( MBE).
利用分子束外延（MBE）设备生长了AI/GaAs（100）肖特基结。 - The hetero epitaxial growth of GaSb on GaAs substrates by molecular beam epitaxy ( MBE) was investigated.
研究了用分子束外延（MBE）在GaAs衬底上生长GaSb薄膜的工艺。 - Chemical beam epitaxy, atomic layer epitaxy, migration enhanced epitaxy, selective area epitaxy, laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition.
化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。 - AlAs/ GaAs/ InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.
用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管。 - The emission spectra of nitrogen plasma, used in GaN film growth by RF plasma molecular beam epitaxy ( MBE) was studied.
研究了射频等离子体辅助分子束外延生长GaN晶膜中氮等离子体的发射光谱。 - GaAs/ InGaAs quantum dots grown by molecular beam epitaxy ( MBE) were studied.
运用透射电子显微术（TEM）对由分子束外延（MBE）制备的GaAsInGaAs多层量子点样品进行观察和分析。 - The paper is a review of technique and recent progress made in organic thin films grown in ultrahigh vacuum by organic molecular beam epitaxy techniques.
本文介绍了超高真空分子束外延生长有机薄膜的技术及其研究进展，讨论了外延材料的纯化过程和杂质对外延薄膜结构的影响； - Surface Diffusion in Annealing of SrTiO_3 Film Grown by Laser Molecular Beam Epitaxy
激光分子束外延SrTiO3薄膜退火过程中表面扩散的研究 - A dynamical growth model of MBE ( Molecular Beam Epitaxy) is discussed.
讨论了分子束外延的动力学生长模型。并以高能电子衍射的表面鉴定方法，为这一模型提供了证据。 - Main works and results include: ( 1). Growth method of self-organized quantum dots was studied. High quality InAs self-organized quantum dots were grown by MBE ( molecular beam epitaxy) technique.
本文开展的主要工作和结果有：（1）研究了自组织量子点的生长方法，利用分子束外延技术（MBE）生长出高质量的InAs自组织量子点。 - The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
本文报道了金属有机源分子束外延设备的设计方案和技术特点。 - To some extent the diagnosis can provide certain basic information for improving the molecular beam epitaxy technology.
在一定程度上为分子束外延工艺的改进提供了依据。 - Molecular beam epitaxy growth and capacitance-voltage measurement of hgte/ cdte superlattice
HgTe／CdTe超晶格的分子束外延生长和电容－电压谱研究 - Study of Molecular Beam Epitaxy InAs Multilayers Dots by TEM
分子束外延InAs量子点材料的透射电子显微镜研究 - Behaviors of As incorporation into HgCdTe in molecular beam epitaxy were studied and reported by using a SIMS ( Secondary Ion Mass Spectrometry) quantitative analysis.
报道了用二次离子质谱分析（SIMS）方法对As在碲镉汞分子束外延中的掺入行为的研究结果。 - The ZnO self-organized quantum dots have been grown on the sapphire ( 1-102) substrate by laser molecular beam epitaxy.
利用激光分子束外延（L-MBE）在蓝宝石（1-102）面上自组织外延生长了ZnO量子点。 - The basic concepts, growth dynamics and applications for semiconductor materials and devices of this technique are presented by comparision with both techniques of molecular beam epitaxy ( MBE) and metallorganic chemical vapor deposition ( MOCVD).
通过与分子束外延（MBE）和金属有机化学汽相沉积（MOCVD）技术的比较，说明了这一新技术的基本概念、生长动力学以及在半导体材料和激光器件方面的应用。 - The Laser Molecular Beam Epitaxy ( Laser MBE) is a new growth method of the films and the superlattices based on the conventional MBE and the pulsed Laser Deposition ( PLD).
激光分子束外延是在传统分子束外延和普通激光淀积技术基础上发展起来的一种最新制备薄膜和人工超晶格方法。 - Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale.
用激光分子束外延，原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。 - Growth of Power HEMT Structures on InP Substrates by Molecular Beam Epitaxy
InP基功率HEMT结构材料分子束外延生长研究 - Chromium oxide films grown by molecular beam epitaxy on MgO ( 001) substrates were characterized by x_ray diffraction ( XRD) and x_ray reflectivity ( XRR) measurements.
采用分子束外延技术（MBE）在MgO（001）基板上沉积了氧化铬薄膜，并利用x射线衍射（XRD）和x射线反射谱（XRR）对薄膜的晶体结构进行了表征。 - The preparation method of zinc oxide has many, such as: sputtering, pulsed laser deposition, molecular beam epitaxy and atomic layer deposition.
目前氧化锌的制备方法有很多，如：溅射法、脉冲激光沉积、分子束外延和原子层淀积等。 - Firstly, the theory and fabrication of molecular beam epitaxy ( MBE) are described in detail.
本文首先详细介绍了分子束外延设备的原理和构造。 - At the same time, the developments of molecular beam epitaxy ( MBE) and metal organic chemical vapor deposition ( MOCVD) have made the characteristics of the devices improved rapidly.
与此同时，随着分子束外延（MBE）和金属有机化学气相沉积（MOCVD）等生长技术的发展，使VCSEL器件得以飞速提高。 - Vacuum evaporation, cathode sputtering, molecular beam epitaxy, is physical deposition.
真空蒸发、阴极溅射、分子束外延等属于物理淀积。